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A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition

Zhan, X, Shen, C, Ji, Z, Chen, J, Fang, H, Guo, F and Zhang, JF A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters. ISSN 0741-3106 (Accepted)

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Abstract

A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n- and p- FETs.

Item Type: Article
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 05 Mar 2019 12:12
Last Modified: 05 Mar 2019 12:18
URI: http://researchonline.ljmu.ac.uk/id/eprint/10245

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