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Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs

Ma, J and Zhang, JF and Ji, Z and Benbakhti, B and Zhang, WD and Mitard, J and Kaczer, B and Groeseneken, G and Hall, S and Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

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Abstract

The high hole mobility of Ge makes it a strong candidate for end of roadmap pMOSFETs and low interface states have been achieved for the Al2O3-GeO2-Ge gate-stack. This structure, however, suffers from significant negative bias temperature instability (NBTI), dominated by positive charge (PC) in Al2O3/GeO2. An in-depth understanding of the PCs will assist in the minimization of NBTI and the defect energy distribution will provide valuable information. The energy distribution also provides the effective charge density at a given surface potential, a key parameter required for simulating the impact of NBTI on device and circuit performance. For the first time, this letter reports the energy distribution of the PC in Al2O3/GeO2 on Ge. It is found that the energy density of the PC has a clear peak near Ge Ec at the interface and a relatively low level between Ec and Ev. Below Ev at the interface, it increases rapidly and screens 20% of the Vg rise.

Item Type: Article
Additional Information: (c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Related URLs:
Date Deposited: 01 May 2015 14:59
Last Modified: 01 May 2015 14:59
DOI or Identification number: 10.1109/LED.2013.2295516
URI: http://researchonline.ljmu.ac.uk/id/eprint/121

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