Ma, J and Zhang, WD and Zhang, JF and Ji, Z and Benbakhti, B and Franco, J and Mitard, J and Witters, L and Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).
PID3545743.pdf - Accepted Version
For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Divisions:||Electronics and Electrical Engineering|
|Date Deposited:||09 Oct 2015 10:08|
|Last Modified:||09 Oct 2015 10:08|
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