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AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction

Ma, J and Zhang, WD and Zhang, JF and Ji, Z and Benbakhti, B and Franco, J and Mitard, J and Witters, L and Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

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Abstract

For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 09 Oct 2015 10:08
Last Modified: 09 Oct 2015 10:08
URI: http://researchonline.ljmu.ac.uk/id/eprint/1330

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