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A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

Ji, Z and Zhang, JF and Lin, L and Duan, M and Zhang, WD and Zhang, X and Gao, R and Kaczer, B and Franco, J and Schram, T and Horiguchi, N and De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

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Abstract

For the first time, we demonstrate that A-G model extracted from short Vg-accelerated stresses can predict both long term DC and AC NBTI under low and dynamic operation Vg. This is achieved by successfully separating non-saturating defects from the saturating ones, allowing reliable extraction of power exponents needed for long term prediction. Unlike R-D model, A-G model does not require solving differential equations for AC NBTI. This saves computation time significantly, especially for high-frequency that needs small time-step, and makes it readily implementable in SPICE-like simulators.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 09 Oct 2015 09:02
Last Modified: 09 Oct 2015 09:02
URI: http://researchonline.ljmu.ac.uk/id/eprint/1513

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