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Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

Zhang, JF and Duan, M and Manut, A and Ji, Z and Zhang, W and Asenov, A and Gerrer, L and Reid, D and Razaidi, H and Vigar, D and Chandra, V and Aitken, R and Kaczer, B and Groeseneken, G (2015) Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM) . 20.4.1-20.4.4. (IEEE International Electron Devices Meeting (IEDM), 7th - 9th December 2015, Washington, DC, USA).

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Abstract

As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 08 Oct 2015 14:47
Last Modified: 30 Mar 2016 13:49
URI: http://researchonline.ljmu.ac.uk/id/eprint/2138

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