Gao, R and Ji, Z and Zhang, JF and Zhang, WD and Hatta, SFWM and Niblock, J and Bachmayr, P and Stauffer, L and Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507
Trap Distribution - IEEE-TSM_revised_clean version_V12.pdf - Accepted Version
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Characterizing positive charges and its energy distribution in gate dielectric is useful for process qualification. A discharge-based technique is introduced to extract their energy distribution both within and beyond substrate band gap. This work investigates the difficulties in its implementation on typical industrial parameter analyzer and provides solutions. For the first time, we demonstrate the technique’s applicability to the advanced 22 nm fabrication process and its capability in evaluating the impact of different strains on the energy distribution. The test time is within several hours. This, together with its implementation on industrial parameter analyzer, makes it a useful tool in the semiconductor manufacturing foundries for process monitoring and optimization.
|Additional Information:||(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.|
|Uncontrolled Keywords:||0906 Electrical And Electronic Engineering, 0910 Manufacturing Engineering|
|Subjects:||T Technology > TK Electrical engineering. Electronics. Nuclear engineering|
|Divisions:||Electronics and Electrical Engineering|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Date Deposited:||09 Oct 2015 10:33|
|Last Modified:||09 Oct 2015 10:33|
|DOI or Identification number:||10.1109/TSM.2015.2407909|
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