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A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Ma, J and Zhang, WD and Zhang, JF and Benbakhti, B and Ji, Z and Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

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Abstract

High mobility germanium (Ge) channel is considered as a strong candidate for replacing the Si in pMOSFETs in near future. It has been reported that the conventional power-law degradation kinetics of Si devices is inapplicable to Ge. In this work, further investigation is carried out on defect energy distribution, which clearly shows that this is because the defects in GeO2/Ge and SiON/Si devices have different physical properties. Three main differences are: 1) Energy alternating defects (EAD) exist in Ge devices but insignificant in Si; 2) The distribution of as-grown hole traps (AHT) has a tail in the Ge band gap but not in Si, which plays an important role in degradation kinetics and device lifetime prediction; 3) EAD generation in Ge devices requires the injected charge carriers to overcome a 2nd energy barrier, but not in Si. Taking the above differences into account, the power law kinetics of EAD generation can be successfully restored by following a new procedure, which can assist in the Ge process/device optimization.

Item Type: Article
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date Deposited: 09 Aug 2016 08:42
Last Modified: 15 Feb 2017 10:59
DOI or Identification number: 10.1109/TED.2016.2597540
URI: http://researchonline.ljmu.ac.uk/id/eprint/4017

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