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Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction

Duan, M and Zhang, JF and Zhang, JC and Zhang, WD and Ji, Z and Benbakhti, B and Zhang, XF and Hao, Y and Vigar, D and Chandra, V and Aitken, R and Kaczer, B and Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

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Abstract

Modelling of the interaction between Hot Carrier Aging (HCA) and Positive Bias Temperature Instability (PBTI) has been considered as one of the main challenges in nanoscale CMOS circuit design. Previous works were mainly based on separate HCA and PBTI instead of Interacted HCA-PBTI Degradation (IHPD). The key advance of this work is to develop a methodology that enables accurate modelling of IHPD through understanding the charging/discharging and generation kinetics of different types of defects during the interaction between HCA and PBTI. It is found that degradation during alternating HCA and PBTI stress cannot be modelled by independent HCI/PBTI. Different stress sequence, i.e. HCA-PBTI-HCA and PBTI-HCA-PBTI, lead to completely different degradation kinetics. Based on the Cyclic Anti-neutralization Model (CAM), for the first time, IHPD has been accurately modelled for both short and long channel devices. Complex degradation mechanisms and kinetics can be well explained by our model. Our results show that device lifetime can be underestimated by one decade without considering interaction.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 13 Jun 2017 09:56
Last Modified: 13 Jun 2017 09:56
URI: http://researchonline.ljmu.ac.uk/id/eprint/6684

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