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Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures

Ahmeda, K and Ubochi, B and Benbakhti, B and Duffy, SJ and Soltani, A and Zhang, WD and Kalna, K Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures. IEEE Access. ISSN 2169-3536 (Accepted)

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Abstract

The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN Transmission Line Model (TLM) heterostructures with a scaled source-to-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental data using an electrothermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of 566 K - 373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7 %, 10 %, and 17 % during a scaling of the source-to-drain distance in the 12 μ m, μ8 m and 4μ m TLM heterostructures, respectively, when compared to the largest 18μ m heterostructure.

Item Type: Article
Additional Information: (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date Deposited: 28 Sep 2017 10:35
Last Modified: 28 Sep 2017 10:35
URI: http://researchonline.ljmu.ac.uk/id/eprint/7230

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