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Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage

Zhang, JF and Duan, M and Ji, Z and Zhang, WD Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.. (Accepted)

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Abstract

Hot carrier aging (HCA) has attracted a lot of attentions recently, as it can be a lifetime limiting mechanism for both I/O and core devices. The applicability of the conventional characterization method developed for large devices to nano-scale devices is questionable, as nano-scale devices suffers from within-a-device-fluctuation (WDF). This work shows that the inclusion of WDF measured by the commercial quasi-DC SMU gives erroneous results. A method is proposed to separate the WDF from the real HCA for reliable parameter extraction of the HCA model. The lifetime and use voltage become yield dependent and the impact of statistical variations on SRAM is assessed.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 05 Dec 2017 10:09
Last Modified: 05 Dec 2017 10:09
URI: http://researchonline.ljmu.ac.uk/id/eprint/7532

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