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Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

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Abstract

An extensive investigation of the pre-existing and generated defects in amorphous-Si/TiO2 based non-filamentary (a-VMCO) RRAM device has been carried out in this work to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constant- voltage-stress (CVS) analysis. The amplitude of RTN, which leads to read instability, is also evaluated statistically at different stages of cell degradation and correlated with different defects, for the first time. It is found that the switching between low and high resistance states (LRS and HRS) are correlated with the profile modulation of pre-existing defects in the ‘defect-less’ region near the a-Si/TiO2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution.

Item Type: Article
Additional Information: (c) 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Institute of Electrical and Electronics Engineers
Date Deposited: 16 Jan 2018 12:00
Last Modified: 17 Sep 2018 09:52
URI: http://researchonline.ljmu.ac.uk/id/eprint/7859

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