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Room Temperature Uniaxial Magnetic Anisotropy Induced By Fe‐Islands in the InSe Semiconductor Van Der Waals Crystal

Moro, F, Bhuiyan, MA, Kudrynskyi, ZR, Puttock, R, Kazakova, O, Makarovsky, O, Fay, MW, Parmenter, C, Kovalyuk, ZD, Fielding, AJ, Kern, M, van Slageren, J and Patanè, A (2018) Room Temperature Uniaxial Magnetic Anisotropy Induced By Fe‐Islands in the InSe Semiconductor Van Der Waals Crystal. Advanced Science. ISSN 2198-3844

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Abstract

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Pharmacy & Biomolecular Sciences
Publisher: Wiley Open Access
Date Deposited: 27 Jun 2018 09:30
Last Modified: 27 Jun 2018 09:30
DOI or Identification number: 10.1002/advs.201800257
URI: http://researchonline.ljmu.ac.uk/id/eprint/8899

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