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As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI)

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices. ISSN 0018-9383 (Accepted)

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Abstract

Positive Bias Temperature Instability (PBTI) is poised to cause significant degradation to nFETs with deep scaling into nanometers. It is commonly modelled by a power law fitted with measured threshold voltage shift. For the first time, this work shows that such models do not warrant PBTI prediction outside the stress conditions used for the fitting. The underlying cause for this failure is the errors in the extracted power exponent. Based on the understanding of different types of defects, we develop a robust As-grown-Generation (A-G) model and demonstrate its capability for accurate prediction of PBTI under both DC and AC conditions. The generation-induced degradation is found to play a key role. Analysis reveals that, although PBTI is usually smaller than NBTI within the typical test time window, it can exceed NBTI by the end of device lifetime.

Item Type: Article
Additional Information: © 2018 IEEE in additional information box
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Institute of Electrical and Electronics Engineers
Date Deposited: 19 Jul 2018 09:57
Last Modified: 19 Jul 2018 09:57
URI: http://researchonline.ljmu.ac.uk/id/eprint/8979

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