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Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices

Zhang, WD, Chai, Z, Ma, J and Zhang, JF Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China. (Accepted)

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Item Type: Conference or Workshop Item (Paper)
Additional Information: © 2018 IEEE
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 13 Nov 2018 09:57
Last Modified: 13 Nov 2018 09:57
URI: http://researchonline.ljmu.ac.uk/id/eprint/9643

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