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Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack

Ma, J and Zhang, JF and Ji, Z and Benbakhti, B and Zhang, WD and Zheng, XF and Mitard, J and Kaczer, B and Groeseneken, G and Hall, S and Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

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Abstract

Ge is a candidate for replacing Si, especially for pMOSFETs, because of its high hole mobility. For Si pMOSFETs, negative-bias temperature instabilities (NBTI) limit their lifetime. There is little information available for the NBTI of Ge-pMOSFETs with Ge/GeO2/Al2O3 stack. The objective of this paper is to provide this information and compare the NBTI of Ge- and Si-pMOSFETs. New findings include: 1) the timeexponent varies with stress biases/field when measured by either the conventional slow dc or pulse I–V technique, making the conventional Vg-accelerated method for predicting the lifetime of Si pMOSFETs inapplicable to Ge-pMOSFETs used in this
paper; 2) the NBTI is dominated by positive charges (PCs) in dielectric, rather than generated interface states; 3) the PC in Ge/GeO2/Al2O3 can be fully annealed at 150 °C; and 4) the defect losses reported for Si sample were not observed. For the first time, we report that the PCs in oxides on Ge and Si behave differently, and to explain the difference, an energy-switching model is proposed for hole traps in Ge-MOSEFTs: their energy levels have a spread below the edge of valence band, i.e., Ev, when neutral, lift well above Ev after charging, and return below Ev following neutralization.

Item Type: Article
Additional Information: (c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Institute of Electrical and Electronics Engineers
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Date Deposited: 01 May 2015 13:31
Last Modified: 25 Jun 2015 12:59
DOI or Identification number: 10.1109/TED.2014.2314178
URI: http://researchonline.ljmu.ac.uk/id/eprint/972

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