Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)
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PID5762645_VLSI_2019_OTS_LJMU_IMEC.pdf - Accepted Version Restricted to Repository staff only Download (451kB) |
Abstract
Comprehensive experimental and simulation evidence of the filamentary-type switching and Vth relaxation mechanism associated with defect charging/discharging in GexSe1-x ovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.
Item Type: | Conference or Workshop Item (Paper) |
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Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
Date Deposited: | 22 May 2019 10:00 |
Last Modified: | 13 Apr 2022 15:17 |
URI: | https://researchonline.ljmu.ac.uk/id/eprint/10709 |
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