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Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)

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Comprehensive experimental and simulation evidence of the filamentary-type switching and Vth relaxation mechanism associated with defect charging/discharging in GexSe1-x ovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Date Deposited: 22 May 2019 10:00
Last Modified: 13 Apr 2022 15:17
URI: https://researchonline.ljmu.ac.uk/id/eprint/10709

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