Zhang, JF, Gao, R, Ji, Z and Zhang, WD Challenge and solution for characterizing NBTI-generated defects in nanoscale devices. In: Proceedings of The 26th International Symposium on the Physical nand Failure Analysis of Integrated Circuits . (International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2 - 5 July 2019, Hangzhou, China). (Accepted)
![]() |
Text
Zhang-LJMU-IPFA-2019-Invited.pdf - Accepted Version Restricted to Repository staff only Download (909kB) |
Abstract
Negative bias temperature instability (NBTI) is a well known ageing process for CMOS technologies. Many early works were focused on large devices where device-to-device variations (DDV) are negligible. As device sizes downscale to nanometers, DDV becomes substantial. NBTI is a stochastic process and causes a time-dependent DDV. Characterizing the NBTI-generated defects in nanoscale devices has two main challenges. First, current fluctuates with time and this introduces uncertainties in measurements. Second, the test time is long and costly: to characterize the NBTI-induced DDV, it is essential to repeat the same test on multiple devices. This work reviews recent progresses in addressing these issues. Based on the As-grown-Generation (AG) model, it will be shown that the measurement uncertainties are dominated by As-grown hole traps and can be removed by subtracting the average value. To reduce the test time, the voltage step stress (VSS) technique is combined with the Stress-Discharge-Recharge (SDR) method. This VSS-SDR technique reduces test time to within one hour per device. The model extracted by VSS-SDR is verified by comparing its prediction with the test data obtained under conventional constant voltage stress.
Item Type: | Conference or Workshop Item (Paper) |
---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
Date Deposited: | 18 Jul 2019 11:41 |
Last Modified: | 13 Apr 2022 15:17 |
URI: | https://researchonline.ljmu.ac.uk/id/eprint/11067 |
Actions (login required)
![]() |
View Item |