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Structural changes during the switching transition of Chalcogenide Selector devices

Guo, Y, Li, H, Zhang, WD and Robertson, J Structural changes during the switching transition of Chalcogenide Selector devices. Applied Physics Letters. ISSN 0003-6951 (Accepted)

APL _OTS_JR_2019_Acceppted.pdf - Accepted Version

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Ovonic threshold switches are a favored choice for chalcogenide-based amorphous (a-) GeSex selector devices used in cross-point arrays of non-volatile memories. Previous models of their non-linear high-field conduction proposed a largely electronic-only switching mechanism, within a fixed density of electronic states. Here, we use a density functional molecular-dynamics supercell calculations to show that the high-current excited state configuration of a-GeSex has structural changes such as additional Ge-Ge bonds and overcoordinated Ge sites, giving lower effective mass, more delocalized conduction states and a lower ON resistance.

Item Type: Article
Additional Information: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at Link.”
Uncontrolled Keywords: 09 Engineering, 02 Physical Sciences
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: AIP Publishing
Date Deposited: 14 Oct 2019 09:44
Last Modified: 04 Sep 2021 08:40
URI: https://researchonline.ljmu.ac.uk/id/eprint/11541

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