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Structural changes during the switching transition of Chalcogenide Selector devices

Guo, Y, Li, H, Zhang, WD and Robertson, J (2019) Structural changes during the switching transition of Chalcogenide Selector devices. Applied Physics Letters, 115 (16). ISSN 0003-6951

APL _OTS_JR_2019_Acceppted.pdf - Accepted Version

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Ovonic threshold switches are a favored choice for chalcogenide-based amorphous (a-) GeSex selector devices used in cross-point arrays of non-volatile memories. Previous models of their non-linear high-field conduction proposed a largely electronic-only switching mechanism, within a fixed density of electronic states. Here, we use a density functional molecular-dynamics supercell calculations to show that the high-current excited state configuration of a-GeSex has structural changes such as additional Ge-Ge bonds and overcoordinated Ge sites, giving lower effective mass, more delocalized conduction states and a lower ON resistance.

Item Type: Article
Additional Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.5125215
Uncontrolled Keywords: 09 Engineering, 02 Physical Sciences
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: AIP Publishing
Date Deposited: 14 Oct 2019 09:44
Last Modified: 05 Aug 2022 10:30
DOI or ID number: 10.1063/1.5125215
URI: https://researchonline.ljmu.ac.uk/id/eprint/11541
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