Facial reconstruction

Search LJMU Research Online

Browse Repository | Browse E-Theses

A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

[img] Text
PID3547431-JI-VLSI-2015.pdf - Accepted Version

Download (413kB)


For the first time, we demonstrate that A-G model extracted from short Vg-accelerated stresses can predict both long term DC and AC NBTI under low and dynamic operation Vg. This is achieved by successfully separating non-saturating defects from the saturating ones, allowing reliable extraction of power exponents needed for long term prediction. Unlike R-D model, A-G model does not require solving differential equations for AC NBTI. This saves computation time significantly, especially for high-frequency that needs small time-step, and makes it readily implementable in SPICE-like simulators.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: IEEE
Date Deposited: 09 Oct 2015 09:02
Last Modified: 13 Apr 2022 15:13
URI: https://researchonline.ljmu.ac.uk/id/eprint/1513

Actions (login required)

View Item View Item