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Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Zhang, H, Zheng, X, Lin, D, Lv, L, Cao, Y, Hong, Y, Zhang, F, Wang, X, Wang, Y, Zhang, W, Zhang, J, Ma, X and Hao, Y (2024) Study on the single-event burnout mechanism of GaN MMIC power amplifiers. Applied Physics Letters, 124 (8). ISSN 0003-6951

Xidian_APL_GaN_single_event_burnout_2023.pdf - Accepted Version

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In this Letter, a single-event burnout (SEB) mechanism in gallium nitride (GaN) microwave monolithic integrated circuit power amplifiers with a high linear energy transfer of 78.1 MeV·cm2/mg has been investigated in detail. A typical SEB phenomenon was observed. With the aid of photon emission measurements and scanning electron microscopy, it is found that catastrophic burnout occurs in the power-stage GaN high electron mobility transistors (HEMTs) and the metal–insulator–metal (MIM) capacitors, respectively. For the GaN HEMT, the incident heavy ions will generate electron–hole pairs within it, which can gain enough energy with the transverse high electric field. The high-energy electrons will collide with the lattice near the drain electrode and induce significant electron trapping, which will result in a significant longitudinal local electric field. When a critical electric field is achieved, catastrophic burnout occurs. For the MIM capacitor, the burnout is attributed to the single-event dielectric rupture via severe impact ionization or latent tracks when heavy ions strike it.

Item Type: Article
Additional Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 124(8) 082105 (2024)- Zhang, H., Zheng, X., Lin, D., Lv, L., Cao, Y., Hong, Y., Zhang, F., Wang, X., Wang, Y., Zhang, W. and Zhang, J. and may be found at 10.1063/5.0185332
Uncontrolled Keywords: 02 Physical Sciences; 09 Engineering; 10 Technology; Applied Physics
Subjects: Q Science > QC Physics
T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Engineering
Publisher: AIP Publishing
SWORD Depositor: A Symplectic
Date Deposited: 26 Feb 2024 14:27
Last Modified: 26 Feb 2024 14:27
DOI or ID number: 10.1063/5.0185332
URI: https://researchonline.ljmu.ac.uk/id/eprint/22690
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