Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches

Saxena, N ORCID: 0000-0002-2626-1327, Wang, C, Hu, Z, Wang, G, Naqi, M, Zhang, L, Zhang, W, Zheng, C, Garbin, D, Degraeve, R, Clima, S, Ravsher, T and Belmonte, A Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches. IEEE Transactions on Electron Devices. ISSN 0018-9383 (Accepted)

Text manuscript.pdf - Accepted Version Access Restricted Available under License Creative Commons Attribution. Download (1MB)

Abstract

Ovonic threshold switching (OTS) devices are used as selectors for emerging non-volatile memory and neuromorphic computing applications, where their performance and reliability are strongly governed by defect states and carrier localization dynamics. In this work, we present a comparative investigation of GeAsSe and GeAsTe OTS devices to elucidate the impact of chalcogen chemistry on trap energy barriers, defect density, localization kinetics, and overall switching behaviour. By combining characterizations with DC, ultrafast pulse, and double-pulse techniques across nanoseconds-to-seconds timescale, we show that material composition affects the localized states, which in turn set the characteristic energy barriers for both field-assisted and thermal-assisted delocalization, and control the leakage current, threshold voltage (Vth), and recovery dynamics. GeAsSe devices exhibit lower leakage, improved on/off selectivity, and lower recovery-induced Vth shift due to larger delocalization energy, while GeAsTe devices show lower switching field (Fth), and higher on-state current leading to more field-driven and thermal-assisted delocalized defects. These insights establish a direct link between defect energetics and device performance, offering material-level guidelines for OTS optimization.

Item Type:	Article
Uncontrolled Keywords:	0906 Electrical and Electronic Engineering; Applied Physics; 4009 Electronics, sensors and digital hardware
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers
Date of acceptance:	20 July 2026
Date Deposited:	21 Jul 2026 14:50
Last Modified:	21 Jul 2026 14:50
DOI or ID number:	10.1109/TED.2026.3716191
URI:	https://researchonline.ljmu.ac.uk/id/eprint/29037

View Item