Items where Author is "Melikyan, V"
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Zhang, H, Zheng, X, Zhang, J 
ORCID: 0000-0003-4987-6428, Li, K, Zhang, W ORCID: 0000-0003-4600-7382, Melikyan, V, Ma, X and Hao, Y
(2026)
The Degradation Mechanism of GaN RF HEMTs Under High-Temperature Operation Stress: Effects of High Drain Current and High Drain Voltage.
IEEE Transactions on Electron Devices, 73 (6).
pp. 3410-3416.
ISSN 0018-9383