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ESD characterization of planar InGaAs devices

Ji, Z and Linten, D and Boschke, R and Hellings, G and Chen, SH and Alian, A and Zhou, D and Mols, Y and Ivanov, T and Franco, J and Kaczer, B and Zhang, X and Gao, R and Zhang, JF and Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).

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We present a comprehensive study of ESD reliability (TLP) on planar nMOSFETs with In0.53Ga0.47As as the channel material. Two types of traps are found during ESD stress. They are formed through independent mechanisms: transient Ef-lowering induced pre-existing e-traps discharging in the gate stack and hot hole induced e-traps generation through impact ionization in the InP buffer. These two types of traps explain the observed walk-out of off-state channel leakage current as well as the two-stage current conduction phenomena in the TLP measurement. The generated e-traps are permanent and can introduce detrimental conduction current harmful to the device performance. By properly selecting the buffer material, these defects can be removed.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 09 Oct 2015 10:44
Last Modified: 09 Oct 2015 10:44
URI: http://researchonline.ljmu.ac.uk/id/eprint/2144

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