Ji, Z, Gao, R and Zhang, JF (2018) Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits. In: Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Preview

Text CSTIC 1-13_Zhigang Ji.pdf - Accepted Version Download (1MB) | Preview

Abstract

Increasing pressure on the quest towards low power applications with stringent reliability demands requires narrowing the gap between NBTI models and real circuit operation for design optimization. In this work, we reviewed the recent-proposed As-grown-Generation (AG) model. By separating different types of defects through experiment, we demonstrated that it can make reliable prediction beyond the measurement window. Compared with other existing models, the proposed model delivered its original mission: Reliably predicting long term aging at low Vg based on a model extracted from Vg-accelerated short tests. Its simple formula makes it readily implementable for circuit level simulation.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	26 Mar 2018 09:09
Last Modified:	13 Apr 2022 15:16
URI:	https://researchonline.ljmu.ac.uk/id/eprint/8363

View Item