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RTN in GexSe1-x OTS Selector Devices

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

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Abstract

Random telegraph noise (RTN) signals in GexSe1-x ovonic threshold switching (OTS) selector have been analyzed in this work, both before and after the first-fire (FF) operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices.

Item Type: Article
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: Elsevier
Date Deposited: 16 May 2019 10:57
Last Modified: 16 May 2020 00:50
DOI or Identification number: 10.1016/j.mee.2019.110990
URI: https://researchonline.ljmu.ac.uk/id/eprint/10706

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