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Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposium on VLSI Technology . (2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan).

PID5762645_VLSI_2019_OTS_LJMU_IMEC.pdf - Accepted Version

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Comprehensive experimental and simulation evidence of the filamentary-type switching and Vth relaxation mechanism associated with defect charging/discharging in GexSe1-x ovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.

Item Type: Conference or Workshop Item (Paper)
Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Date Deposited: 22 May 2019 10:00
Last Modified: 16 May 2024 15:30
DOI or ID number: 10.23919/VLSIT.2019.8776566
URI: https://researchonline.ljmu.ac.uk/id/eprint/10709
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