Facial reconstruction

Search LJMU Research Online

Browse Repository | Browse E-Theses

Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)

[img] Text
PID5762645_VLSI_2019_OTS_LJMU_IMEC.pdf - Accepted Version
Restricted to Repository staff only

Download (451kB)

Abstract

Comprehensive experimental and simulation evidence of the filamentary-type switching and Vth relaxation mechanism associated with defect charging/discharging in GexSe1-x ovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Date Deposited: 22 May 2019 10:00
Last Modified: 22 May 2019 10:00
URI: http://researchonline.ljmu.ac.uk/id/eprint/10709

Actions (login required)

View Item View Item