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Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation

Zhao, T, Zhao, C, Zhang, JF, Mitrovic, IZ, Lim, EG, Yang, L, Song, T and Zhao, C (2020) Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation. Journal of Alloys and Compounds, 829. ISSN 0925-8388

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Solution-processed fabrication of thin-film transistors (TFTs) has low cost and roll-to-roll capability. Indium oxide is one of the promising materials for the metal oxide semiconductor layer in TFTs. Early works used high temperature (~700 C) anneal, which is not suitable for flexible substrates. The toxic solvents, such as 2-methoxyethanol (2-Me), have been widely used in the preparation of precursor solutions. To overcome these challenges, we propose a low temperature ( 250 C) and an eco-friendly process through the incorporation of lithium. Both X-ray photoelectron spectroscopy and electrical characterizations were carried out to optimize the process. The best result was obtained with 10 at.% lithium incorporation. The high field-effect mobility, averaged over 30 devices, is 21.6 cm2 V 1 s 1, which is 380% higher than the groups without lithium incorporation and is higher than or comparable with those reported by early works for the low-temperature solution prepared InO films. They were used to build an inverter successfully. Moreover, the bias stability of the transistors was also proved to be improved through lithium doping. This eco-friendly solution process has the potential for low-cost fabrication of TFTs on the flexible substrate.

Item Type: Article
Uncontrolled Keywords: 0912 Materials Engineering, 0914 Resources Engineering and Extractive Metallurgy, 0204 Condensed Matter Physics
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: Elsevier
Date Deposited: 24 Mar 2020 10:37
Last Modified: 04 Sep 2021 07:36
DOI or ID number: 10.1016/j.jallcom.2020.154458
URI: https://researchonline.ljmu.ac.uk/id/eprint/12587
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