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Molecular Dynamics Simulation of the Material Removal in the Scratching of 4H-SiC and 6H-SiC Substrates

Tian, Z, Chen, X and Xu, X (2020) Molecular Dynamics Simulation of the Material Removal in the Scratching of 4H-SiC and 6H-SiC Substrates. International Journal of Extreme Manufacturing, 2. ISSN 2631-7990

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Single crystal silicon carbide (SiC) is widely used for optoelectronics applications. Due to the anisotropic characteristics of single crystal materials, the C face and Si face of single crystal silicon carbide have different physical properties, which may fit for particular application purposes. This paper presents an investigation of the material removal and associated subsurface defects in a set of scratching tests on the C face and Si face of 4H-SiC and 6H-SiC materials by using molecular dynamics simulation. The investigation reveals the sample material deformation consists of plastic amorphous transformation and dislocation slip that might prone to brittle split. The results show that the material removal at the C face is more effective with less amorphous deformation than that at the Si face. Such a phenomenon in scratching relates to the dislocations on the basal plane (0001) of the SiC crystal. It has also revealed that subsurface defects could be reduced by applying scratching depth of cut as integer multiples of a half molecular lattice thickness. This provides a useful foundation to guide the selection of machining control parameters for the best surface quality.

Item Type: Article
Subjects: T Technology > TP Chemical technology
Divisions: Engineering
Publisher: IOP Publishing
Date Deposited: 03 Aug 2020 10:37
Last Modified: 12 Jan 2022 09:00
DOI or ID number: 10.1088/2631-7990/abc26c
URI: https://researchonline.ljmu.ac.uk/id/eprint/13433
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