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Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734
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Abstract
MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability. In this brief the energy distribution of border traps in AlGaN/GaN MIS-HEMT gate stack is extracted and investigated through a discharging-based trap energy profile technique. The technique adopts spot-Id sense measurement with 1 millisecond measurement time to capture the “whole (both fast and slow)” border traps. The results are beneficial to improve the reliability of AlGaN/GaN MIS-HEMT.
| Item Type: | Article |
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| Uncontrolled Keywords: | 1007 Nanotechnology, 0906 Electrical and Electronic Engineering |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Engineering |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| Date Deposited: | 11 Aug 2020 10:56 |
| Last Modified: | 04 Sep 2021 06:49 |
| DOI or ID number: | 10.1109/JEDS.2020.3016022 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/13479 |
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