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A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734

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Abstract

MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability. In this brief the energy distribution of border traps in AlGaN/GaN MIS-HEMT gate stack is extracted and investigated through a discharging-based trap energy profile technique. The technique adopts spot-Id sense measurement with 1 millisecond measurement time to capture the “whole (both fast and slow)” border traps. The results are beneficial to improve the reliability of AlGaN/GaN MIS-HEMT.

Item Type: Article
Uncontrolled Keywords: 1007 Nanotechnology, 0906 Electrical and Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date Deposited: 11 Aug 2020 10:56
Last Modified: 02 Sep 2020 10:15
DOI or Identification number: 10.1109/JEDS.2020.3016022
URI: https://researchonline.ljmu.ac.uk/id/eprint/13479

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