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A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs

Gao, R, Mehedi, M, Chen, H, Wang, X, Zhang, JF, Lin, XL, He, ZY, Chen, YQ, Lei, DY, Huang, Y, En, YF, Ji, Z and Wang, R (2020) A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS) . (2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA).

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Abstract

Random Telegraph Noise (RTN)/fluctuation is one of the most serious reliability issues in modern deeply scaled CMOS. The current RTN characterization methods need to select devices and can only capture the fast traps, thus it is very difficult to predict and validate device long-term fluctuation behavior. A new fast and test-proven methodology of assessing RTN/fluctuation is proposed in this work. By using the Within Device Fluctuation (WDF), all the devices’ fluctuation can be captured. Moreover, WDF can be well explained and simulated as a sum of all the As-grown Traps (AT) induced RTN.

Item Type: Conference or Workshop Item (Paper)
Additional Information: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subjects: T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: IEEE
Date Deposited: 07 Dec 2020 12:27
Last Modified: 07 Dec 2020 12:27
DOI or Identification number: 10.1109/IRPS45951.2020.9129230
URI: https://researchonline.ljmu.ac.uk/id/eprint/14131

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