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Investigation of Removal Mechanism of 4H-SiC and 6H-SiC Substrates Using Molecular Dynamics Simulation

Tian, Z, Chen, X and Xu, X Investigation of Removal Mechanism of 4H-SiC and 6H-SiC Substrates Using Molecular Dynamics Simulation. In: Journal of Physics: Conference Series . (15th Global Congress on Manufacturing and Management (GCMM), 07 June 2021 - 09 June 2021, Liverpool). (Accepted)

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Abstract

Single crystal silicon carbide (SiC) is widely used in semiconductor devices and illumination devices. The anisotropic characteristics of SiC crystal structure presents different physical properties on the C face and Si face of a single crystal silicon carbide leading to different applications. Aiming at the understanding of the mechanism of material removal and subsurface defect, this paper presents the molecular dynamics simulations of scratching on the C face and Si face of 4H-SiC and 6H-SiC materials. The results show that the material removal at the C face is easier than that at the Si face, so that less subsurface amorphous deformation appears on the C face. Such a difference is due to a key phenomenon - the dislocations on the basal plane (0001) in the SiC subsurface during scratching.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Engineering
Publisher: IOP Publishing
Date Deposited: 07 Jun 2021 11:47
Last Modified: 07 Jun 2021 11:47
URI: https://researchonline.ljmu.ac.uk/id/eprint/15111

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