Facial reconstruction

Search LJMU Research Online

Browse Repository | Browse E-Theses

Cycling induced metastable degradation in GeSe Ovonic threshold switching selector

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters. ISSN 0741-3106 (Accepted)

[img] Text
EDL_OTS_Metastable_Final.pdf - Accepted Version
Restricted to Repository staff only

Download (746kB)

Abstract

Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in emerging memory arrays, but there is still a gap between its performance and the rigorous requirement from memory devices, especially its endurance improvement is hindered by insufficient understanding of the mechanism. In this work, cycling induced degradation of GeSe-based OTS selectors is studied with electrical characterization techniques. The existence of metastable state between the on- and off-state during cycling is observed and statistically analyzed alongside with the gradual off-state leakage current increase. Such metastable degradation may be attributed to the generation of unstable Ge-Ge bonds that might be induced by element segregation, which is also responsible for the higher off-state leakage current in GeSe selectors after large cycling or with higher Ge component. This work provides experimental guidance for optimizing OTS selectors.

Item Type: Article
Additional Information: © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: IEEE
Date Deposited: 01 Sep 2021 11:57
Last Modified: 04 Sep 2021 05:05
URI: https://researchonline.ljmu.ac.uk/id/eprint/15425

Actions (login required)

View Item View Item