Hu, Z, Zhang, W, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383
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Abstract
Experimental evidence and analysis in this work provide new insights into the fast switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching-OFF process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch-OFF mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.
Item Type: | Article |
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Additional Information: | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Uncontrolled Keywords: | 0906 Electrical and Electronic Engineering; Applied Physics |
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
Divisions: | Engineering |
Publisher: | Institute of Electrical and Electronics Engineers |
SWORD Depositor: | A Symplectic |
Date Deposited: | 03 Jan 2023 11:17 |
Last Modified: | 03 Jan 2023 11:30 |
DOI or ID number: | 10.1109/TED.2022.3231233 |
URI: | https://researchonline.ljmu.ac.uk/id/eprint/18515 |
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