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Characterizing and Modelling RTN under real circuit bias conditions

Tok, KH, Zhang, J, Brown, J, Ji, Z, Zhang, W and Marsland, J (2023) Characterizing and Modelling RTN under real circuit bias conditions. IEEE Transactions on Electron Devices, 70 (5). pp. 2424-2430. ISSN 0018-9383

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Random Telegraph Noise (RTN) has attracted much attention, as it becomes higher for smaller devices. Early works focused on RTN in linear drain current, ID,LIN, and there is only limited information on RTN in saturation current, ID,SAT. As transistors can operate in either linear or saturation modes, lack of RTN model in ID,SAT prevents modelling RTN for real circuit operation. Moreover, circuit simulation requires both driving current and threshold voltage, VTH. A common practice of early works is to evaluate the RTN in VTH by ΔVTH=ΔID,LIN/gm, where gm is transconductance. It has been reported that the ΔVTH evaluated in this way significantly overestimates the real ΔVTH, but there is little data for establishing the cumulative distribution function (CDF) of the real ΔVTH. An open question is whether ΔVTH and ΔID,LIN/ID,LIN follow the same CDF. The objectives of this work are three-fold: to provide statistical test data for RTN in ID,SAT; to measure the RTN in real ΔVTH by pulse ID-VG; and, for the first time, to apply the integral methodology for developing the CDF per trap for all four key parameters needed by circuit simulation˗˗ ΔID,LIN/ID,LIN, ΔID,SAT/ID,SAT, ΔVTH,LIN, and ΔVTH,SAT. It is found that the Log-normal CDF is the best for ΔID,LIN/ID,LIN and ΔID,SAT/ID,SAT, while the General Extreme Value CDF is the best for ΔVTH,LIN and ΔVTH,SAT. Both ΔID,SAT/ID,SAT and ΔVTH,SAT are higher than their linear counterparts and separate modelling is required. Finally, the applicability of integral methodology in predicting the long term ΔID,LIN/ID,LIN is demonstrated.

Item Type: Article
Additional Information: © 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering; Applied Physics
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: Institute of Electrical and Electronics Engineers
SWORD Depositor: A Symplectic
Date Deposited: 09 Mar 2023 09:43
Last Modified: 24 Apr 2023 10:15
DOI or ID number: 10.1109/TED.2023.3253665
URI: https://researchonline.ljmu.ac.uk/id/eprint/19052
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