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Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling

Wu, J, Ren, P, Zhang, C, Xiao, Y, Xue, Y, Li, Y, Wang, X, Zhang, L, Liu, J, Zhang, J, Wang, R, Ji, Z and Huang, R (2024) Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling. In: 2023 International Electron Devices Meeting (IEDM) . pp. 1-4. (69th Annual IEEE International Electron Devices Meeting (IEDM), 9th - 13th December 2023, San Francisco, USA).

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Abstract

In this paper, a new physical-based model for flicker noise in advanced FinFET technology is proposed based on separation of intertwined noise sources. The proposed separation method can well clarify the sources of flicker noise, enabling the modeling of different components independently. The accuracy of this model is validated by the full-scale bias and device size dependencies of flicker noise, as well as its variations. It is observed that ignoring noise sources other than oxide traps can result in an underestimation of approximately 60% under operating condition. By introducing the equivalent circuit for simulation, the new model is readily to be used with commercial simulators for circuit-level analysis.

Item Type: Conference or Workshop Item (Paper)
Additional Information: © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subjects: T Technology > T Technology (General)
T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Engineering
Publisher: IEEE
SWORD Depositor: A Symplectic
Date Deposited: 04 Oct 2023 09:15
Last Modified: 09 Apr 2024 11:57
DOI or ID number: 10.1109/IEDM45741.2023.10413861
URI: https://researchonline.ljmu.ac.uk/id/eprint/21415
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