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Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).
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New Insight-NBTI.pdf - Accepted Version Download (1MB) | Preview |
Abstract
In this paper, a new methodology for the assessment of end-of-life variability of NBTI is proposed for the first time. By introducing the concept of characteristic failure probability, the uncertainty in the predicted 10-year VDD is addressed. Based on this, variability resulted from NBTI degradation at end of life under specific VDD is extensively studied with a novel characterization technique. With the further circuit level analysis based on this new methodology, the timing margin can be relaxed. The new methodology has also been extended to FinFET in this work. The wide applicability of this methodology is helpful to future reliability/variability-aware circuit design in nano-CMOS technology.
| Item Type: | Conference or Workshop Item (Paper) |
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| Subjects: | T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | IEEE |
| Date Deposited: | 20 Oct 2015 13:22 |
| Last Modified: | 13 Apr 2022 15:14 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/2215 |
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