Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

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Abstract

Filament rupture/restoration induced by movement of defects, e.g. oxygen ions/vacancies (Vo), is considered as the switching mechanism in HfO2 RRAM. However, details of filament alteration during switching are still speculative, due to the limitations of existing experiment‐based probing techniques, impeding its understanding. Direct experimental evidence is largely missing at defect level for investigating filament alteration and linking it with switching and failure mechanisms, which is also needed for performance and reliability modelling. In this work, for the first time, an RTN based defect tracking technique (RDT) is developed for RRAM devices, which can monitor the movements of defects and statistically provide their spatial and energy profiles. The critical filament region (CFR) is experimentally identified and its alteration is observed and correlated with switching operations under various DC and AC conditions. A new endurance SET failure mechanism is also revealed. This provides a useful tool for further development of RRAM technology.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	21 Mar 2016 09:55
Last Modified:	13 Apr 2022 15:14
URI:	https://researchonline.ljmu.ac.uk/id/eprint/3296

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