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Electron trapping in gate dielectrics and NBTI of MOSFETs

Chang, M H (2006) Electron trapping in gate dielectrics and NBTI of MOSFETs. Doctoral thesis, Liverpool John Moores University.

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Item Type: Thesis (Doctoral)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Date Deposited: 08 Mar 2017 10:07
Last Modified: 03 Sep 2021 23:30
DOI or ID number: 10.24377/LJMU.t.00005798
URI: https://researchonline.ljmu.ac.uk/id/eprint/5798
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