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Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices

Ahmeda, K, Ubochi, B, Kalna, K, Benbakhti, B, Duffy, SJ, Zhang, WD and Soltani, A (2017) Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices. In: Proceedings of the European Microwave Integrated Circuits COnference . pp. 37-40. (European Microwave Week 2017, 08 October 2017 - 13 October 2017, Nuremberg, Germany).

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The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model. The electro-thermal simulations show hot-spots at the edge of the drain contact due to a large electric field affecting the device reliability. Due to the applied electrical stress, the total polarization, relative to the 18 μm heterostructure, decreases by 7 %, 10 % and 17% during a reduction of the source-to-drain distance to the 12 μm, 8 μm, and 4 μm, respectively, as a result of the additional strain induced by electrical stress. This additional stress on source/drain contacts reduces the polarization at the surface leading to the inverse piezoelectric effect.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Copyright owner EuMA.
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: European Microwave Association
Date Deposited: 24 Oct 2017 10:15
Last Modified: 13 Apr 2022 15:15
URI: https://researchonline.ljmu.ac.uk/id/eprint/6406
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