Moro, F, Bhuiyan, MA, Kudrynskyi, ZR, Puttock, R, Kazakova, O, Makarovsky, O, Fay, MW, Parmenter, C, Kovalyuk, ZD, Fielding, AJ, Kern, M, van Slageren, J and Patanè, A (2018) Room Temperature Uniaxial Magnetic Anisotropy Induced By Fe‐Islands in the InSe Semiconductor Van Der Waals Crystal. Advanced Science. ISSN 2198-3844

Preview

Text Moro_et_al-2018-Advanced_Science.pdf - Published Version Available under License Creative Commons Attribution. Download (3MB) | Preview

Abstract

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Pharmacy & Biomolecular Sciences
Publisher:	Wiley Open Access
Date Deposited:	27 Jun 2018 09:30
Last Modified:	04 Sep 2021 02:36
DOI or ID number:	10.1002/advs.201800257
URI:	https://researchonline.ljmu.ac.uk/id/eprint/8899

View Item