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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Duffy, SJ, Benbakhti, B, Kalna, K, Boucherta, M, Zhang, WD, Bourzgui, N and Soltani, A (2018) Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access. ISSN 2169-3536

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Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiation based high-resolution X-ray diffraction technique combined with drift -diffusion simulations show that strain reduction at the vicinity of ohmic contacts increases electric fi eld at these locations, resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short- and long-channel gateless devices.

Item Type: Article
Additional Information: (c) 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date Deposited: 07 Aug 2018 09:54
Last Modified: 04 Sep 2021 10:14
DOI or ID number: 10.1109/ACCESS.2018.2861323
URI: https://researchonline.ljmu.ac.uk/id/eprint/9079
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