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Duffy, SJ, Benbakhti, B, Zhang, WD, Kalna, K, Ahmeda, K, Boucherta, M, Bourzgui, N, Maher, H and Soltani, A (2018) A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC) . (European Microwave Week 2018, 23 - 28 September 2018, Madrid, Spain).
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EuMIC2018 FINAL 12022018.pdf - Accepted Version Download (895kB) | Preview |
Abstract
The source/drain and gate induced charge trapping within an AlGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measurement of current transients of both source and drain terminals, a characterisation technique has been developed to: (i) analyse the transient current degradations from μs to seconds, and (ii) evaluate the drain and gate induced charge trapping mechanisms. Two degradation mechanisms of current are observed: bulk trapping at a short time (<1ms); and surface trapping and redistribution (>1ms). The bulk charge trapping is found to occur during both ON and OFF states of the device when VDS>0V; where its trapping time constant is independent of bias conditions. In addition, the time constant of the slower current degradation is found to be mainly dependent on surface trapping and redistribution, not by the second heat transient.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Date Deposited: | 07 Aug 2018 10:21 |
| Last Modified: | 22 May 2024 11:46 |
| DOI or ID number: | 10.23919/EuMIC.2018.8539935 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/9081 |
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