Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A et al, Li, H, Hou, TH, Hudec, B, Akinwande, D, Ge, R, Ambrogio, S, Roldan, JB, Miranda, E, Suñe, J, Pey, KL, Wu, X, Raghavan, N, Wu, E, Lu, WD, Navarro, G, Zhang, WD, Wu, H, Li, R, Holleitner, A, Wurstbauer, U, Lemme, MC, Liu, M, Long, S, Liu, Q, Lv, H, Padovani, A, Pavan, P, Valov, I, Jing, X, Han, T, Zhu, K, Chen, S, Hui, F and Shi, Y (2018) Recommended Methods to Study Resistive Switching Devices. Advanced Electronic Materials. ISSN 2199-160X

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Abstract

Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Item Type:	Article
Additional Information:	This is the peer reviewed version of the following article: M. Lanza, H.‐S. P. Wong, E. Pop, D. Ielmini, D. Strukov, B. C. Regan, L. Larcher, M. A. Villena, J. J. Yang, L. Goux, A. Belmonte, Y. Yang, F. M. Puglisi, J. Kang, B. Magyari‐Köpe, E. Yalon, A. Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, T.‐H. Hou, B. Hudec, D. Akinwande, R. Ge, S. Ambrogio, J. B. Roldan, E. Miranda, J. Suñe, K. L. Pey, X. Wu, N. Raghavan, E. Wu, W. D. Lu, G. Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M. C. Lemme, M. Liu, S. Long, Q. Liu, H. Lv, A. Padovani, P. Pavan, I. Valov, X. Jing, T. Han, K. Zhu, S. Chen, F. Hui, Y. Shi, Adv. Electron. Mater. 2018, 1800143, which has been published in final form at http://dx.doi.org/10.1002/aelm.201800143. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	Wiley
Date Deposited:	13 Nov 2018 09:25
Last Modified:	04 Sep 2021 09:56
DOI or ID number:	10.1002/aelm.201800143
URI:	https://researchonline.ljmu.ac.uk/id/eprint/9642

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