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Time-dependent variation: A new defect-based prediction methodology

Zhang, JF, Duan, M, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Thean, G, Groseneken, G and Asenov, A (2014) Time-dependent variation: A new defect-based prediction methodology. In: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers . (IEEE Symposium of VLSI technology, 9th - 12th June 2014, Honolulu).

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For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN. The non-discharging component follows the same model as that for large devices: the `AG' model. Based on this defect framework, a new methodology is proposed for test engineers to predict the long term TDV and yield and its prediction-capability is verified.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: IEEE
Date Deposited: 12 Oct 2015 13:35
Last Modified: 13 Apr 2022 15:13
URI: https://researchonline.ljmu.ac.uk/id/eprint/977
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