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Design Optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Othman, NAF, Rahman, S, Wan Muhamad Hatta, S, Soin, N, Benbakhti, B and Duffy, S (2019) Design Optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions. Microelectronics International, 36 (2). pp. 73-82. ISSN 1356-5362

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Abstract

Design optimization of the traditional AlGaN/GaN HEMT device has been comprehensively conducted in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel as well as study of the effects in the physical dimensions of the HEMT have been extensively carried out. Critical figure-of-merits (FOMs) specifically the DC characteristics, 2DEG concentrations and mobility of the heterostructure device have been evaluated. Significant observations include enhancement of maximum current density by 63% while the electron concentration was found to propagate by 1020 cm-3 in the channel. This work aims to provide tactical optimization to traditional HFETs, rendering its application as power amplifiers, MMICs and RADAR, which requires low noise performance and very high RF design operations. Analysis in covering the breadth and complexity of heterostructure devices has been carefully executed through extensive TCAD modelling and the end structure obtained has been optimized to provide best performance.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Emerald
Date Deposited: 18 Jan 2019 09:11
Last Modified: 08 Aug 2019 10:46
DOI or Identification number: 10.1108/MI-09-2018-0057
URI: http://researchonline.ljmu.ac.uk/id/eprint/9967

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