Article

Duffy, S, Benbakhti, B, Zhang, WD, Ahmeda, K, Kalna, K, Boucherta, M, Mattalah, M, Chahdi, HO, Bourzgui, N-E and Soltani, A (2020) A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 67 (5). pp. 1924-1930. ISSN 0018-9383

Othman, NAF, Rahman, S, Wan Muhamad Hatta, S, Soin, N, Benbakhti, B and Duffy, S (2019) Design Optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions. Microelectronics International, 36 (2). pp. 73-82. ISSN 1356-5362

Duffy, SJ, Benbakhti, B, Kalna, K, Boucherta, M, Zhang, WD, Bourzgui, N and Soltani, A (2018) Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access. ISSN 2169-3536

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Ahmeda, K, Ubochi, B, Benbakhti, B, Duffy, SJ, Soltani, A, Zhang, WD and Kalna, K (2017) Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures. IEEE Access, 5. pp. 20946-20952. ISSN 2169-3536

Benbakhti, B, Duffy, SJ, Mattalah, M, Zhang, WD, Bouchilaoun, M, Boucherta, M, Kalna, K, Bourzgui, N, Maher, H and Soltani, A (2017) Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate. ECS Journal of Solid State Science and Technology, 6 (11). ISSN 2162-8769

Benbakhti, B, Chan, KH, Soltani, A and Kalna, K (2016) Device and Circuit Performance of the Future Hybrid III-V and Ge-Based CMOS Technology. IEEE Transactions on Electron Devices, 63 (10). pp. 3893-3899. ISSN 0018-9383

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Conference or Workshop Item

Duffy, SJ, Benbakhti, B, Zhang, WD, Kalna, K, Ahmeda, K, Boucherta, M, Bourzgui, N, Maher, H and Soltani, A (2018) A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC) . (European Microwave Week 2018, 23 - 28 September 2018, Madrid, Spain).

Ahmeda, K, Ubochi, B, Kalna, K, Benbakhti, B, Duffy, SJ, Zhang, WD and Soltani, A (2017) Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices. In: Proceedings of the European Microwave Integrated Circuits COnference . pp. 37-40. (European Microwave Week 2017, 08 October 2017 - 13 October 2017, Nuremberg, Germany).

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J, Franco, J, Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).