Article

Hu, Z, Zhang, W, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106