Article

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J and Chalker, PR (2017) Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping. Applied Physics Letters, 111 (9). ISSN 0003-6951

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Potter, RJ, Guo, Y, Gibbon, JT, Dhanak, VR, Zhang, W, Zhang, JF, Robertson, J, Hall, S and Chalker, PR (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). ISSN 0003-6951