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Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

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